utc 2SB647 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r211-010,a silicon pnp epitaxial application * low frequency power amplifier to-92nl 1 1:emitter 2:collector 3:base absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol value unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current ic -1 a collector peak current ic(peak) -2 a collector power dissipation pc 0.9 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo ic= -10 a,i e =0 -120 v collector-emitter breakdown voltage v (br) ceo ic= -1ma,r be = -80 v emitter-base breakdown voltage v (br) ebo i e = -10 a,i c =0 -5 v collector cut-off current i cbo v cb = -100v,i e =0 -10 a h fe1 v ce = -5v, ic= -150ma(note) 60 320 dc current transfer ratio h fe2 v ce = -5v, ic= -500ma(note) 30 collector-emitter saturation voltage v ce (sat) ic= -500ma,i b = -50 ma(note) -1 v base-emitter saturation voltage v be v ce = -5v,ic= -150ma(note) -1.5 v gain bandwidth product f t v ce = -5v,ic= -150ma 140 mhz collector output capacitance cob v cb = -10v,i e =0,f=1mhz 20 pf note: pulse test
utc 2SB647 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r211-010,a classification of h fe1 rank b c d range 60-120 100-200 160-320 typical performance characteristics 0 50 100 150 0.4 0.8 1.2 maximum collector dissipation curve collector power dissipation pc (w) ambient temperature ta ( ) 0-2-4-6 -0.2 -0.4 -0.6 typical output characteristics collector current ic (a) collector to emitter voltage v ce (v) -0.8 -1.0 -8 -10 pc =0.9w i b =0 -0.5m a -1 -2 -5 -10 -20 -30 -40 -80 -60 -100 -120 0 -0.2 -0.4 -0.6 -1 -2 -10 typical transfer characteristics collector current ic (ma) base to emitter voltage v be (v) -20 -50 -0.8 -1.0 -5 -100 -200 -500 v ce =-5v pulse ta=25 ta=75 ta= -25 0 -3 -10 -30 -1 100 200 dc current transfer ratio vs.collector current dc current transfer ratio h fe collector current ic (ma) 300 -100 -300 400 500 600 v ce =-5v pulse ta=75 ta=25 ta=-25 -1000
utc 2SB647 pnp epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r211-010,a -10 -30 -100 -300 0 40 80 gain bandwidth product vs.colllector current gain bandwidth product f t (mhz) collector current ic (ma) 120 -1000 160 200 240 v ce =-5v 0 -3 -10 -30 -1 -0.2 -0.4 saturation voltage vs.collector current base to emitter saturation voltage v be (sat) (v) collector current ic (ma) -0.6 -100 -300 -0.8 -1.0 -1.2 ic =10 i b pulse ta=75 ta=25 ta=-25 -1000 collector to emitter saturation voltage v ce (sat) (v) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 ta=-25 ta=25 ta=75 v ce (sat) v be (sat) -1 -2 -5 -10 2 5 10 collector output capacitance vs.collector to base voltage collector output capacitance cob (pf) collector to base voltage v cb (v) 20 -20 50 100 200 f= 1 mhz i e =0 -50 -100 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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